Package on Package Structure

ABSTRACT

A package on packaging structure comprising a first package and a second package provides for improved thermal conduction and mechanical strength by the introduction of a thermally conductive substrate attached to the second package. The first package has a first substrate and a first integrated circuit. The second package has a second substrate containing through vias that has a first coefficient of thermal expansion. The second package also has a second integrated circuit having a second coefficient of thermal expansion located on the second substrate. The second coefficient of thermal expansion deviates from the first coefficient of thermal expansion by less than about 10 or less than about 5 parts-per-million per degree Celsius. A first set of conductive elements couples the first substrate and the second substrate. A second set of conductive elements couples the second substrate and the second integrated circuit.

BACKGROUND

Package on Package (PoP) is becoming an increasingly popular integratedcircuit packaging technique because it allows for higher densityelectronics. Increasing die size in PoP can lead to thermal dissipationinefficiency, warpage induced ball cracking caused by thermal expansionmismatch between the components of the package, and a larger thandesired profile package.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIGS. 1 a through 1 e are cross sectional views of embodiment devices;and

FIG. 2 is a top-down view of an illustrative embodiment.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

Various embodiments of Package on Package (PoP) structures will bedescribed with reference to FIG. 1. It should be appreciated that thematerials, geometries, dimensions, structures, and process parametersdescribed herein are exemplary only, and are not intended to be, andshould not be construed to be, limiting to the invention claimed herein.

A first embodiment package will be discussed with reference to FIG. 1 a.FIG. 1 a illustrates PoP structure 1. PoP structure 1 includes toppackage 2, which contains a plurality of stacked die 8, which may bewire bonded to top substrate 16 by way of contacts 14 (on respectivestacked die 8), bond wires 10, and contacts 12 (on top substrate 16).Individual stacked die may comprise a memory chip, a logic chip, aprocessor chip, or the like. Although FIG. 1 a illustrates three stackeddie, this is for illustration only. Likewise, the use of wire bonding ismerely illustrative and other approaches for electrically connecting thestacked die are within the contemplated scope of the present disclosure.

As discussed above, top substrate 16 illustrated in FIG. 1 a hascontacts 12 on a first side for electrical connection to othercomponents. Top substrate 16 has contacts 18 on a second side. Contacts18 of top substrate 16 are coupled to connector elements 20. In theillustrated embodiment, connector elements 20 are solder balls thatprovide for electrical conduction of signals and power to stacked die 8.Other connection components, such as conductive bumps, conductive balls,conductive pillars, and the like could be employed as connector element20.

As further illustrated by Figure la, connector elements 20 physicallyand electrically connect top package 2 to bottom package 4. Bottompackage 4 includes die 22, which is flip chip attached to bottomsubstrate 26, and which is electrically connected thereto by way ofconnector elements 24.

Illustrated in FIG. 1 a, bottom substrate 26 may be composed of asemiconductor material such as silicon, germanium or gallium arsenide.Bottom substrate 26 may have a thickness 32 of from about 30 microns toabout 200 microns, causing PoP structure 1 to have a low physicalprofile. Through vias 28, which may be composed of copper, or may becomposed of tungsten, aluminum, solder, or the like, pass through bottomsubstrate 26. Bottom substrate 26 has a high thermal conductivity, whichmight be about 110 W/mK. Through vias 28 of bottom substrate 26 arealigned with connector elements 24, which electrically and thermallyconnect bottom substrate 26 with die 22. Through vias 28 are alsoaligned with connector elements 30, which electrically and thermallyconnect bottom substrate 26 to printed circuit board (PCB) 6.

An advantageous feature of the illustrated package of FIG. 1 a is that athermal conduction path is provided between die 22 and PCB 6. Thisthermal conduction path is provided as follows. Die 22 is flip chipattached to bottom substrate 26. Heat may be conducted from die 22 tobottom substrate 26 through connector elements 24. As addressed above,bottom substrate 26 contains through vias 28, which have a high thermalconductivity. The alignment of through vias 28 with connector elements24 and with connector elements 30 provide a thermal path from die 22 toPCB 6, where heat can be dissipated. Heat is thus conducted from die 22,through connector elements 24, across through vias 28 of bottomsubstrate 26, through connector elements 30 to PCB 6.

Another advantageous feature of the embodiment illustrated in FIG. 1 ais a reduction in warpage induced ball cracking caused by thermalexpansion mismatch. Thermal expansion mismatch between components of thepackage can cause warpage, which can in turn cause cracking in connectorelements. In the embodiment illustrated in FIG. 1 a, the thermalexpansion coefficient of die 22 is similar to the thermal expansioncoefficient of bottom substrate 26. The thermal expansion coefficient ofbottom substrate 26 might be from about 2 parts-per-million per degreeCelsius to about 6 parts-per-million per degree Celsius. The mismatch ofthe thermal expansion coefficient of bottom substrate 26 and the thermalexpansion of coefficient of die 22 might be less than about 10parts-per-million, or in some embodiments less than about 5parts-per-million per degree Celsius.

A further advantageous feature of the embodiment illustrated in FIG. 1 ais the low profile of PoP structure 1. Bottom substrate 26 has athickness 32 which might be about 100 microns. Bottom package 4 has aheight 34 which might be about 390 microns. PoP structure 1 has athickness 36 which might be about 980 microns. The relatively lowprofile of PoP structure 1 allows for a high density of devices.

Another embodiment package is illustrated in FIG. 1 b. In FIG. 1 b,underfill 38 lies between bottom substrate 26 and PCB 6. Underfill 38might be an epoxy polymer, or it might be the composite polymer withsilica additives. Silica additives may enhance the mechanical strengthof the polymer and/or to adjust the CTE of the polymer. Underfill 38reinforces the strength of connector elements 30. Underfill 38completely surrounds connector elements 30 and is contiguous with bothbottom substrate 26 and PCB 6.

An additional embodiment package is illustrated in FIG. 1 c. In FIG. 1c, underfill 40 is localized near connector elements 30 along PCB 6.Underfill 40 partially surrounds connector elements 30. Underfill 40 iscontiguous with PCB 6. However, underfill 40 is not contiguous withbottom substrate 26. Underfill 40 might be an epoxy polymer. Connectorelements 30 might have a diameter 41 of about 250 microns and a pitch 42of about 400 microns. Underfill 40 might have a height 46 of about 10-50microns and a width 44 of about 5-80 microns. Because underfill 40 mighthave a low thermal conductivity, the combination of connector elements30 with underfill 40 allows the underfill 40 to reinforce the strengthof the connection, while connector elements 30 maintain high thermalconductivity.

A further embodiment package is illustrated in FIG. 1 d. In FIG. 1 d,underfill 48 is localized near connector elements 30 along bottomsubstrate 26. Underfill 48 partially surrounds connector elements 30.Underfill 48 is contiguous with bottom substrate 26. However, underfill48 is not contiguous with PCB 6. Underfill 48 might be an epoxy polymer.Connector elements 30 might have a diameter 41 of about 250 microns anda pitch 42 of about 400 microns. Underfill 48 might have a height 52 ofabout 10-50 microns and a width 50 of about 5-80 microns. As in theembodiment illustrated in FIG. 1 c, localized underfill 48 reinforcesthe strength of connector elements 30 while maintains a high thermalconductivity.

In the various above-described embodiments, underfill 40 may be formedaround each and every connector element 30, or around only certainselected connector elements 30. One such embodiment is illustrated inFIG. 2, wherein underfill 40 is formed around only those connectorelement 30 located at corners of the package. The package is illustratedfrom a top down perspective in FIG. 2, wherein top package 2 andunderlying substrate 6 are visible. Connector element 30 and underfill40 are beneath top package 2 and hence are illustrated in phantom line.Note that the corner regions are the regions most subject to stress, andhence underfill 40 is most beneficial for those connector elements. Inother embodiments, other connector elements in other regions of thepackage could be selected for inclusion of underfill 40.

FIG. 1 e illustrates an embodiment containing more than one die. Die 54and die 56 are thermally and electrically connected to PCB 6. Each ofdie 54 and die 56 is flip chip attached to bottom substrate 26. AlthoughFIG. 1 e illustrates two die, this is for illustration only. Any numberof die may be flip chip attached to bottom substrate 26. Heat may beconducted from die 54 and from die 56 to bottom substrate 26 throughconnector elements 24. As addressed above, bottom substrate 26 containsthrough vias 28, which have a high thermal conductivity. The alignmentof connector elements 24 with through vias 28 further provides a goodpath for thermal conduction. Through vias 28 are aligned with connectorelements 30, providing a good thermal path to PCB 6, where the heat canbe dissipated. Heat is thus conducted from die 54 and from die 56through connector elements 24, across through vias 28 of bottomsubstrate 26, through connector elements 30 to PCB 6.

Although the present embodiments and their advantages have beendescribed in detail, it should be understood that various changes,substitutions and alterations can be made herein without departing fromthe spirit and scope of the disclosure as defined by the appendedclaims. Moreover, the scope of the present application is not intendedto be limited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure, processes, machines manufacture,compositions of matter, means, methods, or steps, presently existing orlater to be developed, that perform substantially the same function orachieve substantially the same result as the corresponding embodimentsdescribed herein may be utilized according to the present disclosure.Accordingly, the appended claims are intended to include within theirscope such processes, machines, manufacture, compositions of matter,means, methods, or steps.

What is claimed is:
 1. A semiconductor device comprising: a firstpackage including: a first substrate; and a first integrated circuit onthe first substrate; a second package including: a second substratehaving a first coefficient of thermal expansion, the second substratehaving conductive vias therethrough; and a second integrated circuithaving a second coefficient of thermal expansion, the second integratedcircuit located on the second substrate, wherein the second coefficientof thermal expansion deviates from the first coefficient of thermalexpansion by less than 10 parts-per-million per degree Celsius; a firstset of conductive elements coupling the first substrate and the secondsubstrate; and a second set of conductive elements coupling the secondsubstrate and the second integrated circuit.
 2. The semiconductor deviceof claim 1 further comprising: a third set of conductive elementscoupled to the second substrate; and a printed circuit board coupled tothe third set of conductive elements.
 3. The semiconductor device ofclaim 1, wherein the second substrate has a thickness of from about 30microns to about 200 microns.
 4. The semiconductor device of claim 1,wherein the second substrate has a thermal expansion coefficient ofabout 3 parts per million per degree Celsius to about 6 parts permillion per degree Celsius.
 5. The semiconductor device of claim 1,wherein the second substrate comprises silicon, wherein the conductivevias through the second substrate comprise a material selected from thegroup consisting of copper, tungsten, aluminum and solder.
 6. Thesemiconductor device of claim 2, further comprising underfillsurrounding at least a subset of the third set of conductive elements,the subset including conductive elements located at corners of thesecond substrate.
 7. The semiconductor device of claim 2, furthercomprising underfill partially surrounding the third set of conductiveelements, the underfill being not contiguous with the second substrateand contiguous with the printed circuit board, or being contiguous withthe second substrate and not contiguous with the printed circuit board.8. The semiconductor device of claim 1, wherein the second coefficientof thermal expansion deviates from the first coefficient of thermalexpansion by less than 5 parts-per-million per degree Celsius.
 9. Apackage comprising: a first package having a first die formed on a firstsubstrate; a second package having a second die and a third die formedon a second substrate, the second substrate having a first coefficientof thermal expansion, the second substrate having conductive viastherethrough, the second die having a second coefficient of thermalexpansion, wherein the second coefficient of thermal expansion deviatesfrom the first coefficient of thermal expansion by less than 10parts-per-million per degree Celsius, the third die having a thirdcoefficient of thermal expansion, wherein the third coefficient ofthermal expansion deviates from the first coefficient of thermalexpansion by less than 10 parts-per-million per degree Celsius; a firstset of conductive elements coupling the first substrate and the secondsubstrate; a second set of conductive elements coupling the secondsubstrate and the second die; and a third set of conductive elementscoupling the second substrate and the third die.
 10. The package ofclaim 9, further comprising: a fourth set of conductive elements coupledto the second substrate; and a printed circuit board coupled to thefourth set of conductive elements.
 11. The package of claim 10, furthercomprising underfill surrounding at least ones of the fourth set ofconductive elements that are located at corners of the second substrate.12. The package of claim 10, further comprising underfill partiallysurrounding the fourth set of conductive elements, the underfill beingnot contiguous with the second substrate and contiguous with the printedcircuit board, or being contiguous with the second substrate and notcontiguous with the printed circuit board.
 13. The package of claim 9,wherein the second coefficient of thermal expansion deviates from thefirst coefficient of thermal expansion by less than 5 parts-per-millionper degree Celsius, and wherein the third coefficient of thermalexpansion deviates from the first coefficient of thermal expansion byless than 10 parts-per-million per degree Celsius.
 14. The package ofclaim 9, wherein the second substrate has a thickness of about 100microns.
 15. The package of claim 9, wherein the second die has athermal expansion coefficient of from about 3 parts per million perdegree Celsius to about 6 parts per million per degree Celsius.
 16. Thepackage of claim 9, wherein the second substrate comprises silicon,wherein the conductive vias through the second substrate comprise amaterial selected from the group consisting of copper, tungsten,aluminum and solder.
 17. A method of forming a package comprising:providing a first package, the first package including a first die on afirst substrate; providing a second package, the second packageincluding a second die coupled to a second substrate by a first set ofconductive elements, the second substrate having a first coefficient ofthermal expansion, the second substrate having conductive viastherethrough, the second die having a second coefficient of thermalexpansion, wherein the second coefficient of thermal expansion deviatesfrom the first coefficient of thermal expansion by less than 5parts-per-million per degree Celsius; and coupling the first package andthe second package with a second set of conductive elements.
 18. Themethod of claim 17, further comprising: forming thermal vias in thesecond substrate; and aligning the thermal vias in the second substratewith the first set of conductive elements and thermally coupling thesecond die and the second substrate with the first set of conductiveelements.
 19. The method of claim 17, further comprising attaching aprinted circuit board to the second substrate with a third set ofconductive elements.
 20. The method of claim 19, further comprisinginserting underfill between the second substrate and the printed circuitboard, the underfill being adjacent to the third set of conductiveelements.